Biovici Graphene Dip Chips

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Biovici Graphene Dip Chips

from £250.00

The Biovici Graphene Dip Chip makes manual sensor creation a breeze. With its accurate resistive measurements and passivated metal tracks, researchers can rely on it for their projects. The user-friendly design and compatibility with Biovici GFET Connector or direct contact probing make the Graphene Dip Chip the ideal choice for hassle-free manual sensor creation.

Dip chip source-drain resistance range and Grade allocation:
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Introducing the Biovici Graphene Dip Chip - the future of sensing technology for researchers and scientists looking to take their sensing technology to the next level. Here are some unique benefits of our product:

  • Designed to be easy to handle for manual creation of sensors, our Graphene Dip Chips eliminate the hassle and cost of fabricating high-quality graphene devices yourself.

  • With the graphene located at the top of the chip and a ceramic passivation layer protecting the metal tracks, our product provides unmatched accuracy in resistive measurements for real-time biosensors, chemical sensors, and graphene device research.

  • Whether you choose to use our Biovici GFET Connector or prefer direct contact probing, the Graphene Dip Chip is designed to meet your sensing needs in liquid mediums.

  • Our product offers three choices of grade - <7.5kΩ (Grade A), <12.5kΩ (Grade B), <15kΩ (Grade C) - to meet your specific needs. Full wafer is available on request, and we ship worldwide (excluding tax and duty outside of the UK).

  • The Graphene Dip Chip has been developed specifically for liquid-based biosensing via collaborative Innovate UK research projects. Our passivated metal interconnects are buried beneath an inert ceramic passivation layer, providing long-lasting and accurate performance for your research needs.

Take the first step to advancing your research today. Choose the Biovici Graphene Dip Chip now!

 

Graphene Channel Cross-Section

Technical Specifications:

Chip dimensions: 18.2mm x 9.7mm (H x W)

Chip substrate material: Si

Chip substrate thickness: 525µm

Gate oxide materiaL: SiO2

Gate oxide thickness: 300nm

Substrate resistivity: 1-10Ωcm

Metal contacts specifications: 30nm Chromium/200nm Palladium

Passivation specifications: 50nm Ceramic

Dip chip source-drain resistance range and Grade allocation: <7.5kΩ (Grade A), <12.5kΩ (Grade B), <15kΩ (Grade C)

Dirac point: -20V - 20V

Yield: >99% (Grade A and B), >70% (Grade C)

Maximum back gate voltage: ±50V

Maximum temperature limit: <200°C