Biovici Graphene Dip Chips
Biovici Graphene Dip Chips
The Biovici Graphene Dip Chip makes manual sensor creation a breeze. With its accurate resistive measurements and passivated metal tracks, researchers can rely on it for their projects. The user-friendly design and compatibility with Biovici GFET Connector or direct contact probing make the Graphene Dip Chip the ideal choice for hassle-free manual sensor creation.
Introducing the Biovici Graphene Dip Chip - the future of sensing technology for researchers and scientists looking to take their sensing technology to the next level. Here are some unique benefits of our product:
Designed to be easy to handle for manual creation of sensors, our Graphene Dip Chips eliminate the hassle and cost of fabricating high-quality graphene devices yourself.
With the graphene located at the top of the chip and a ceramic passivation layer protecting the metal tracks, our product provides unmatched accuracy in resistive measurements for real-time biosensors, chemical sensors, and graphene device research.
Whether you choose to use our Biovici GFET Connector or prefer direct contact probing, the Graphene Dip Chip is designed to meet your sensing needs in liquid mediums.
Our product offers three choices of grade - <7.5kΩ (Grade A), <12.5kΩ (Grade B), <15kΩ (Grade C) - to meet your specific needs. Full wafer is available on request, and we ship worldwide (excluding tax and duty outside of the UK).
The Graphene Dip Chip has been developed specifically for liquid-based biosensing via collaborative Innovate UK research projects. Our passivated metal interconnects are buried beneath an inert ceramic passivation layer, providing long-lasting and accurate performance for your research needs.
Take the first step to advancing your research today. Choose the Biovici Graphene Dip Chip now!
Technical Specifications:
Chip dimensions: 18.2mm x 9.7mm (H x W)
Chip substrate material: Si
Chip substrate thickness: 525µm
Gate oxide materiaL: SiO2
Gate oxide thickness: 300nm
Substrate resistivity: 1-10Ωcm
Metal contacts specifications: 30nm Chromium/200nm Palladium
Passivation specifications: 50nm Ceramic
Dip chip source-drain resistance range and Grade allocation: <7.5kΩ (Grade A), <12.5kΩ (Grade B), <15kΩ (Grade C)
Dirac point: -20V - 20V
Yield: >99% (Grade A and B), >70% (Grade C)
Maximum back gate voltage: ±50V
Maximum temperature limit: <200°C